AGNIT is a fab-lite Gallium Nitride (GaN) semiconductor company designing and developing GaN wafers, components and modules for strategic and telecommunication sectors. Built on 17+ years of GaN expertise from the Indian Institute of Science, Bangalore, AGNIT supplies application-specific devices tailored to your system rather than catalogue-only parts.
GaN HEMTs · high power density, high efficiency
Most GaN suppliers start at the packaged device. AGNIT starts at epitaxy — growing its own GaN wafers, then building HEMT devices, circuits and modules on top of them. That vertical reach is what makes application-specific GaN practical: the epi stack, the device geometry and the match can all be tuned to your band and duty cycle.
GaN epi wafers grown on Si, SiC and Sapphire substrates, engineered for RF, power and optoelectronic applications — the foundation of the whole product line.
View lineHigh-efficiency GaN HEMTs for demanding power, frequency and linearity requirements across VHF, UHF, L-, S-, C-, X-, Ku-, K-, Ka- and E-band — as bare die or unmatched RF transistors.
View lineReady-to-test boards matched to AGNIT GaN RF devices, available for both pulsed and continuous-wave modes — so a device can be characterised before it hits your design.
View lineGaN power amplification for radar, EW and tactical transmit chains, where power density and thermal headroom decide the size of the whole system.
View sectorWider bandwidths and good linearity with fewer stages — lower system complexity for base-station and wireless transmit applications.
View sectorGaN devices for high-efficiency power conversion, where switching speed and low losses cut both heat and converter volume.
View sectorThree product families that stack on each other — wafers, devices built on them, and boards to evaluate those devices. Part-level selection is application-specific; tell us your band, power and duty cycle and we'll come back with the right device.
Epitaxial GaN wafers engineered for power, RF and optoelectronic applications, grown in-house across three substrate options.
Read moreHigh-efficiency GaN HEMTs supplied as bare dies or unmatched RF transistors, covering VHF through E-band for high-power, high-frequency designs.
Read more
Boards designed around AGNIT's GaN RF devices for precise test and validation, available across pulsed and continuous-wave modes.
Read moreNeed a specific band, power level or an application-specific device? See the full AGNIT GaN RF device range →
AGNIT Semiconductors is a fab-lite GaN company spun out of the Indian Institute of Science, Bangalore, where its founding team accumulated more than 17 years of GaN research before commercialising it. The company designs and develops GaN wafers, components and modules for strategic and telecommunication sectors.
Its stated approach is P.A.C.E. — high Power, Affordable, Compact and highly Efficient — aimed squarely at the industry's long-standing difficulty in translating GaN's theoretical advantages into trustworthy, buildable parts.
GaN power amplifiers offer high power density, higher efficiency, wider bandwidth and good linearity, which reduces stage count and system complexity in wireless transmit chains. AGNIT's team spans academia, industry and government labs, with 100+ combined years in GaN, RF design and semiconductors, and 20+ patents to date.
IMPO-RF represents AGNIT in Israel — GaN wafers, RF devices and evaluation boards. Tell us your band, output power, duty cycle and package constraint and we'll match a device or scope an application-specific one.